Two days, five themes, over 35 inspiring presentations

The CS International conference has attracted industry leading experts from all the major companies involved in the compound semiconductor industry.

Book your place today for the 2019 conference as tickets are limited. Please contact us via info@cs-international.net or +44 (0)24 76718970 for more details.

2018 conference agenda sponsored by Inspectrology
Monday 9th April 2018
18:30-21:00
Pre-conference networking drinks reception, organised by Angel Business Communications and in association with IQE PLC
Day 1 - Tuesday 10th April 2018
08:00
Registration - Includes Refreshments
08:50
Housekeeping by Andrew Nelson, Conference Chair
Wrestling market share from silicon power devices

What are the next opportunities for SiC? And how can GaN gain significant traction in the market place?

09:00
Keynote Shifting Gears: The “GaN-ification” of Automobiles
Philip Zuk, Transphorm
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Wrestling market share from silicon power devices

Keynote

Presentation

Shifting Gears: The “GaN-ification” of Automobiles

Automobile electrification is radically changing a long- entrenched industry. By 2025, semiconductor content is projected to increase by as much as 50 percent per vehicle. However, with internal vehicle system redesigns comes a hyper-focus on increased system efficiencies. Electric assist HEVs, PHEVs, and BEVs cannot be entirely supported by incumbent power electronics. Enter GaN: the wide bandgap semiconductor material surpassing historical power density, weight and performance metrics. Automobile manufacturers are turning from longstanding Tier 1 suppliers toward innovative power electronics companies using GaN. Learn which vehicle systems benefit most from GaN and how they allow for revolutionary automotive designs never before possible.    

Speaker

Philip Zuk

Transphorm


Philip leads the market strategy and market adoption of high voltage GaN technology in high power applications for Transphorm. He worked previously for Vishay (Siliconix) heading up their high voltage superjunction technology, Microsemi PPG running marketing efforts on their high voltage MOSFET, FRED diodes, IGBTs, and SiC efforts, Medallion Instrumentation Systems and Fairchild Semiconductor. He has expertise in RFID, power supply designed systems and applications, high power semiconductor devices and project management.

He holds a MBA (Hons) from I.H. Asper School of Business, University of Manitoba and has a Bachelor of Science in Electrical Engineering, University of Manitoba, and an Electronic Engineering Technology Associate Degree, Red River College. He holds 2 US patents a trade secret and has authored many technical and application papers.


09:20
Analyst The SiC & GaN Power Semiconductor Market: Forecasts and Drivers
Richard Eden, IHS Markit
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Wrestling market share from silicon power devices

Analyst

Presentation

The SiC & GaN Power Semiconductor Market: Forecasts and Drivers

This presentation will share key findings from the latest IHS Markit Technology report on Silicon Carbide and Gallium Nitride Power Semiconductors. It will present up-to-date ten-year forecasts for the global markets, identifying where these technologies can compete with silicon in terms of device type and application. It will evaluate the likely key applications, presenting a mid-case scenario for both technologies depending on a number of factors. The SiC & GaN wafer substrate supply chain will be discussed. Finally, I will try to answer the question: what is needed to drive a faster ramp up of SiC and GaN revenues?

Speaker

Richard Eden

IHS Markit


Richard Eden is a principal analyst for power semiconductors at IHS Markit. For the last seven years, Richard has been responsible for IHS reports on the Si, SiC and GaN discrete power semiconductor and power module markets. He has written, and been quoted in, several articles on these topics in the trade press.

Richard has over 30 years of electronics industry experience including design at Plessey Microwave, sales and business development for ROHM Semiconductor, and marketing management at distributor RS Components. He is based in the IHS Global office in Wellingborough, UK, and may be contacted at Richard.Eden@ihsmarkit.com. 


09:35
Exploiting the merits of GaN and SiC
Peter Friedrichs, Infineon
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Wrestling market share from silicon power devices

Presentation

Exploiting the merits of GaN and SiC

The contribution will a brief overview about latest developments carried out at Infineon related to WGB power devices. Included are progress in SiC MOSFETs and GaN HEMTS. Product definition considerations will be sketched as well as the resulting performance and reliability of the developed devices. An important aspect for the success of WBG components is the choice of the right package, therefore, a few examples will be given indicating the impact of the right housing choice. Finally, an initial assessment of the impact provided by SiC devices for various pilot applications will be discussed.

Speaker

Peter Friedrichs

Infineon


Dr. Peter Friedrichs was born in 1968 in Germany. He achieved a Dipl.-Ing. in microelectronics from the Technical University of Bratislava in 1993, and a PhD degree from FhG-IIS-B in 1997. In 1996 he joined the Corporate Research of the Siemens AG and was involved in the development of power switching devices on SiC. Later he joined SiCED GmbH & Co. KG, a joint venture of Siemens and Infineon, on March the 1st, 2000. Since July 2004 he was the managing director of SiCED. After the integration of SiCED’s activities into Infineon started to work as Senior Director Silicon Carbide from April 1st, 2011.

09:50
Accelerated Adoption of Wide Bandgap Devices in Automotive Applications
Felix Grawert, AIXTRON
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Wrestling market share from silicon power devices

Presentation

Accelerated Adoption of Wide Bandgap Devices in Automotive Applications

SiC and GaN power switches are making in-roads into industrial and automotive applications as reliability concerns are addressed and commercial viability is achieved. Efficiency, power density and system cost reduction drive adoption. Vapor phase epitaxy is the key enabling technology for volume manufacturing of the material stacks required in WBG power devices. In this presentation we will discuss production solutions for SiC and GaN power devices on 150 & 200 mm substrates. As established on our tool-of-record in the GaN industry, full wafer level automation is driving production throughput on 150 mm SiC wafers. Shortest process time enabled by high growth rate processes are leading to significant cost reduction which is a key requirement for the industry.

Speaker

Felix Grawert

AIXTRON


Dr. Grawert is President of AIXTRON SE and focuses on SiC and GaN Power Semiconductors as well as OLED Display applications. He joined from Infineon Technologies where he was heading the product segment High Voltage Conversion comprising Si, SiC and GaN High Voltage switches from 2013 to 2017. Before that he worked at McKinsey & Company consulting clients in the semiconductor, high tech and automotive industry. Dr. Grawert holds a PhD in Electrical Engineering and Computer Science from the Massachusetts Institute of Technology (MIT), as well as Electrical Engineering degrees from Georgia Institute of Technology and University of Karlsruhe. 

10:05
Status Updates: Volume Manufacturing of High Performance & Scalable GaN Power Devices on 8-inch Diameter QST Platform
Cem Basceri, Qromis
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Wrestling market share from silicon power devices

Presentation

Status Updates: Volume Manufacturing of High Performance & Scalable GaN Power Devices on 8-inch Diameter QST Platform

While developers are making headway with GaN power devices and applications, the existing  wafer sizes, yields, cost and performance scaling for both GaN switches and diodes have been limited for volume manufacturing ― creating obstacles for mainstream GaN adoption with  competitive cost structure thereby preventing access to a much larger addressable market. As the result of significant R&D and pilot-line validation, Qromis’ solution to high volume, low cost  and scalable GaN manufacturing is a specially-designed fab-friendly substrate material called “QST” (Qromis Substrate Technology) which supports high quality GaN epitaxy layers (from a  few microns to tens of microns thick) and high performance power device designs thereby paving the way to create a robust GaN power business with large products portfolio (100V to 1,500V  lateral or vertical switches, diodes, ICs and more), all manufactured on the same 8-inch or 12-inch production platform. In this talk, status updates on QST-based materials and device  technologies, and the products development work, extending from 100V to 1,500V switches and diodes, will be presented. Also, a detailed review of the company’s 8-inch volume manufacturing  status and the power device wafer foundry services for the industry players, in partnership with Vanguard International Semiconductor and Micron Technology, will be discussed.

Speaker

Cem Basceri

Qromis


Dr. Cem Basceri has spent more than 20 years in materials science and semiconductor technologies with various executive leadership and managerial positions in start-up ventures to Fortune 500 public companies.  Previously, Dr. Basceri served as CTO and Executive Member of Bridgelux, focusing on energy efficient LED devices, components and smart lighting systems. Dr. Basceri has more than 220 issued US patents and number of technical articles in refereed journals. 


10:20
Accelerating the Commercial Application of Compound Semiconductors
Andy Sellars, CS Catapult
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Wrestling market share from silicon power devices

Presentation

Accelerating the Commercial Application of Compound Semiconductors

Compound semiconductors are set to deliver performance gains in a wide range of applications, from automotive to communications and healthcare. The global market for compound semiconductors is growing rapidly, and is forecast to rise from $66bn in 2016 to $144bn by 2023, a compound annual growth rate of 11%, which is 3 times higher than the equivalent rate for silicon.
Compound semiconductors outperform silicon devices in many applications requiring power electronics, RF/microwave communications, photonics and sensing. For example, electronic traction using silicon devices is inefficient, bulky, and requires liquid cooling. Electronic traction using compound semiconductors is much more efficient, but requires a system redesign, which is costly and involves complex technical risks. The Compound Semiconductor Applications Catapult is a £50m translational research facility supported by Innovate UK, the UK’s innovation agency. Its aim is to accelerate the use of compound semiconductors by helping companies overcome the technical and business risks associated with adopting new technologies. This paper describes how companies can access the Catapult’s world-class capabilities to develop new products, and our strategy of developing evaluation modules to accelerate the adoption of new compound semiconductor devices. 


Speaker

Andy Sellars

CS Catapult


After completing his PhD at Strathclyde University, Andy held R&D posts with Rolls Royce, Spirent PLC and  Abbott Diagnostics, developing power transmission, RADAR, advanced test systems and photon detectors. Following an Executive MBA from Glasgow University and a 20-year career in the electronics industry, including developing lighting to film James Bond, Andy joined Innovate UK in 2013, where he was responsible for materials, electronics and precision manufacturing. Andy developed the business case for the Compound Semiconductor Applications Catapult, consulting with industry, government and academia. The Catapult was announced in January 2016, and Andy joined the Catapult as Chief Business Development Officer in 2017.

10:35
Fast-Loop Assessment of GaN/AlGaN Epitaxial Layers for Power Applications
Mohammed Alomari, IMS Chips
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Wrestling market share from silicon power devices

Presentation

Fast-Loop Assessment of GaN/AlGaN Epitaxial Layers for Power Applications

The different GaN wafer providers use different growth reactors, growth recipes and epitaxial layers design, all influencing the resulting device yield and characteristics. IMS CHIPS has developed a Fast-Loop routine, which within a short time enables the structural and electrical characterization of the GaN wafer, correlates the device yield to defects and electrical properties of the wafer, and feeds back reliability parameters to a physics based model which can be directly integrated in common circuit design tools. The results, in the shape of wafer maps, are also used by growth reactor manufacturers and epitaxial layer providers. The Fast-Loop routine thus enables better design and commercial planning for GaN devices, starting from the material source and up to device manufacturers.

Speaker

Mohammed Alomari

IMS Chips


Mohammed Alomari received his Ph.D. degree in electrical engineering from Ulm University, Ulm, Germany, in 2012. His doctoral thesis focused on advanced technological solution addressing GaN HEMTs reliability issues.

Currently he is the group leader of GaN Technology in the Institute of Microelectronics Stuttgart (IMS CHIPS). His primary interests include establishing a CMOS based fabrication routine of GaN/Si based power devices, providing realistic and commercial-ready device and system design models, and exploring novel GaN substrates and novel application fields.


10:50
Morning Refreshment Break
11:20
Trimming the Losses in GaN Gate Injection Transistors Utilizing Bulk GaN Substrates
Hiroyuki Handa, Panasonic
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Wrestling market share from silicon power devices

Presentation

Trimming the Losses in GaN Gate Injection Transistors Utilizing Bulk GaN Substrates

GaN-based normally-off Gate Injection Transistors (GITs) with p-type gate over AlGaN/GaN heterojunction are fabricated on bulk GaN substrates. Thickness of insulating GaN buffer layer is increased up to 16 μm for the presented device from 5 μm for conventional GITs on Si. The thick buffer reduces the parasitic output capacitances, which enables fast turn-off switching. The thick buffer on bulk GaN substrates help to improve the crystal quality of AlGaN/GaN so that the sheet resistance is reduced. The resultant RonQoss (Ron: on-state resistance, Qoss: output charge) as a figure-of-merit for high speed switching is reduced down to 940 mΩnC, which leads to high turn-off dVds/dt of 285 V/ns that is twice higher than reported values by GITs on Si. The presented device would enable more energy-efficient and compact systems.

Speaker

Hiroyuki Handa

Panasonic


Hiroyuki Handa received the B.S., M.S., and Ph.D. degrees in electronic engineering from Tohoku University, Sendai, Japan, in 2006, 2008, and 2011, respectively. Since 2011, he has been with Panasonic Corporation, Osaka, Japan, and has been engaged in the development of GaN Gate Injection Transistors (GITs) on Si substrates. He is currently engaged in the development of GaN GITs on bulk GaN substrates. His research interests include graphene formation by thermal conversion of 3C-SiC thin films on Si substrates and graphene-based electronic devices.

11:35
Extending Operational Limits in Power and Blocking Voltage Levels with GaN Technology.
Tamara Baksht, VisIC Technologies
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Wrestling market share from silicon power devices

Presentation

Extending Operational Limits in Power and Blocking Voltage Levels with GaN Technology.

Today the most common vision for wide band gap semiconductors is that GaN on Si devices will dominate in applications with low and medium (up to 3 kW) power level and are limited by blocking voltage up to 650V. VisIC Technologies presents GaN Advanced Low Loss Switch technology platform that can successfully compete with SiC MOSFETs and JFETs, and Si IGBTs. Measured results unambiguously show that VisIC’s GaN devices are performing successfully at power up to 10kW and blocking voltage up to 1200V.

Switching waveforms of half bridge based on VisIC’s 22mOhm GaN device 650V in SMT package present extremally fast switching time about 4 for fall and 6ns for rise time at 40A current. The same half bridge based DC/DC buck converter shows efficiency above 98% at 8kW power level at switching frequency 200kHz.

Speaker

Tamara Baksht

VisIC Technologies


Tamara achieved a PhD degree in EE from Tel Aviv University, in high frequency high power HEMTs in 2005 and started to work with GAN HEMTs from 2001.

Since the establishment of VisIC Technologies in 2010, Tamara has led the company through research to becoming an innovative product manufacturing company.


11:50
A Techno-economics Look at SiC WBG from Wafer to Motor Drive
Samantha Reese, National Renewable Energy Laboratory, USA
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Wrestling market share from silicon power devices

Presentation

A Techno-economics Look at SiC WBG from Wafer to Motor Drive

Techno-economic analysis helps benchmark and deliver supply chain and manufacturing insights that can be leveraged by decision-makers to inform investment strategies, policy, and other decisions to promote economic growth and competitiveness. Silicon Carbide (SiC) wide-band gap (WBG) technologies is poised to be an integral contributor to the clean energy economy. We use bottoms-up regional manufacturing cost models to show SiC power electronics, manufactured in volume, could result in final product cost parity with those manufactured with silicon. The models are further leveraged to show innovation pathways to lower cost and potentially expanded technology adoption.

Speaker

Samantha Reese

National Renewable Energy Laboratory, USA


Samantha Reese is a Senior System Engineer at the National Renewable Energy Lab (NREL). She received her B.S. in Engineering and Applied Science (E&AS) from Caltech and M.S. in E&AS from Yale University with an emphasis in electrical engineering. As part of NREL’s Strategic Energy Analysis Center (SEAC) she provides objective techno-economic analysis to inform research and investment in the development of clean energy technologies. Prior to her work at NREL, Samantha had extensive industry manufacturing experience, including transitioning products from research and development to high volume manufacturing internationally.

12:05
Simplified SiC Backside Thinning
Sarah Okada, Revasum
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Wrestling market share from silicon power devices

Presentation

Simplified SiC Backside Thinning

Demand for SiC substrates is growing as the demand for SiC-based power and RF devices increases. Yet the adoption of SiC is slowed by cost and by the difficulty of processing the material. Revasum has developed a streamlined grind and CMP process that eliminates conventional lapping and diamond polishing steps and the associated issues. Revasum’s solution reduces the overall cost to manufacture SiC substrates, in addition to improving quality, productivity and yield -- removing two barriers to more rapid growth in demand for SiC.   


Speaker

Sarah Okada

Revasum


Ms. Okada started in semiconductor industry in 1995 as a marketing assistant in the applications development group. During her career, she has been responsible for product management, market research, marketing communications, and new product development. In 2013, Ms. Okada was promoted to director of sales and marketing for Strasbaugh where she incorporated marketing and sales best practices to develop the new Strasbaugh brand. In 2017, she was elected vice president of products and applications for Revasum

12:20
Efficient Metal Deposition with the Ferrotec UF6100 200mm Lift-off Evaporator
Phil Greene, Ferrotec
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Wrestling market share from silicon power devices

Presentation

Efficient Metal Deposition with the Ferrotec UF6100 200mm Lift-off Evaporator

As the global compound semiconductor market grows, scaling up substrate size is part of the drive to improve yield and lower costs. With a focus on performance factors including uniformity, collection efficiency, particulate generation, throughput, integration and clean-room footprint, the UF6100 evaporator was designed for metal lift-off processes on 200mm substrates. Design objectives and achieved results are presented demonstrating performance to help enable industry goals.

Speaker

Phil Greene

Ferrotec


Dr. Phil Greene is the R&D Manager for Temescal products at Ferrotec (USA) Corporation. For the past 19 years he has worked on the development of processes and equipment for physical vapor deposition of thin films. At Ferrotec he is engaged in the development of improved uniformity and control of electron beam evaporated films.

12:35
Lunch Break
13:45
High-Capacity Wafer-Scale Solutions for More than Moore Applications
Mikko Soderlund, Beneq
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Wrestling market share from silicon power devices

Presentation

High-Capacity Wafer-Scale Solutions for More than Moore Applications

GaN high electron mobility transistors (HEMTs) have great potential for next generation energy-efficient power switching applications. Due to the fail-safe capability of the switching devices, the normally-off operation with positive threshold voltage (VTH) is highly desirable for GaN HEMTs in power electronics. Key challenges associated with GaN devices are due to high quality conformal dielectric for HEMT gate recess structure as well as vertical MISFET structure. Dielectric layers such as Al2O3, AlON, SiO2, Si3N4, and HfO2 (and composites/laminated thereof) deposited by ALD can address these challenges owing to high conformality of the deposition process. To enable high-throughput manufacturing of such GaN HEMT devices, high-capasity thermal and plasma enhanced ALD systems are introduced. 

Speaker

Mikko Soderlund

Beneq


Dr. Mikko Söderlund is Head of Industrial Solutions at Beneq, a leading supplier of ALD thin-film equipment and deposition services. He has Masters in Applied Electronics (1998), and PhD in Micro-and Nanoscience from Helsinki University of Technology (2009). Dr. Söderlund has more than 15 years’ experience in commercialization of innovative deposition technologies for Optical communications, Solid-state lighting, display, photovoltaics, and semiconductor markets. 

14:00
How can GaN-on-Si compete with SiC in the market for 1200 Volt devices?
Burkhard Slischka, ALLOS Semiconductors
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Wrestling market share from silicon power devices

Presentation

How can GaN-on-Si compete with SiC in the market for 1200 Volt devices?

With lower on-resistance and faster switching ,GaN surpasses even SiC’s excellent properties. But GaN-on-GaN is too expensive while GaN-on-Si is suffering from the issues of hetero-epitaxy and resulting constraints in GaN thickness, crystal quality and strain-management. As a consequence, GaN-on-Si is today limited to applications of up to 600 V and epi engineers find themselves frequently in situations where they have to trade one crucial value for another to find an acceptable balance of quality and performance values.

In our talk we will show how the issues of hetero-epitaxy have been overcome and a crystal quality has been reached that allows breakdown voltages of 1400 V and minimizes trapping effects. 150 and 200 mm wafer diameter are available with 675 and 725 µm thicknesses without cracks or wafer-breakage and with low and precisely controlled bow. Utilizing this technology, the next stop on the roadmap will be 300 mm.

We conclude by discussing how this will shift the competitive landscape between GaN-on-Si and SiC in the 900 and 1200 V range.


Speaker

Burkhard Slischka

ALLOS Semiconductors


Burkhard Slischka is CEO of ALLOS Semiconductors, an IP licensing and developing company for GaN-on-Si patents and technology. ALLOS’ technology platform delivers solutions for power semiconductor, RF and micro LED applications. The company is headquartered in Dresden, Germany and serves customers world-wide. Prior to co-founding ALLOS Burkhard was CEO of GaN-on-Si epiwafer supplier AZZURRO Semiconductors and worked in leading business and project management roles throughout the technology industry. At ALLOS his main focus is on strategy and partnership development as well as on multi-project management. 

14:15
Defect Inspection and Process Control Solutions for Compound Semiconductor Materials
Anoop Somanchi, KLA-Tencor
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Wrestling market share from silicon power devices

Presentation

Defect Inspection and Process Control Solutions for Compound Semiconductor Materials

Leading device makers in the III-V material and power IC compound semiconductor industry need to characterize yield-limiting defects to achieve faster development time, higher product yields and lower costs. Full-surface, high sensitivity defect inspection and accurate process feedback enables improved substrate quality and optimized epitaxial growth yields for GaAs, InP, SiC and GaN based processes. We will show the latest Candela inspection technology’s high sensitivity to a wide range of critical substrate defects (e.g., scratches, stains, stacking faults and slip lines) and demonstrate the value of automated defect classification for reducing the time required to identify, source and correct yield-limiting defects. Additionally, we will provide a production-ready yield management methodology overview, with data demonstrating the correlation of substrate and epi defects to device properties.

Speaker

Anoop Somanchi

KLA-Tencor



14:30
Process Control Solutions to Maximize Yield in HVM for SiC and GaN Power Devices
Benoit Ravot, Nanometrics
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Wrestling market share from silicon power devices

Presentation

Process Control Solutions to Maximize Yield in HVM for SiC and GaN Power Devices

The power device market is seeking a significant shift from classic silicon into wide bandgap materials. Main candidates for existing and upcoming mass market products are SiC and GaN. While these materials have been used for years in niche applications and developments, the high-volume manufacturing of such devices is still in an early stage. Therefore, process control solutions to provide the base data to establish a sophisticated statistical process control are in high demand. Nanometrics’ materials characterization business unit is a specialist in epitaxial layer growth since more than 40 years. In this talk we want to introduce metrology solutions addressing the needs of data precision, high speed wafer monitoring and factory automation to make their users competitive, successful and improve the yield of their products. 

Speaker

Benoit Ravot

Nanometrics

14:45
Afternoon Refreshment Break
Finding solutions with heterogeneous integration

Where will the growth of compound semiconductors on silicon deliver a fundamental change? And what are the tricks to ensure success?

15:15
Keynote Dense Integration of GaN Power Switches with CMOS Drivers
Jean-Pierre Locquet, KU Leuven
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Finding solutions with heterogeneous integration

Keynote

Presentation

Dense Integration of GaN Power Switches with CMOS Drivers

Power electronics is the key technology to control the flow of electrical energy between source and load for many applications. Wide band gap semiconductors such as GaN use their capability to operate at higher voltages, temperatures, and switching frequencies with greater efficiencies. The GaNonCMOS project aims to bring GaN power electronics to the next level of maturity by providing the most densely integrated materials to date. This development will drive a new generation of densely integrated power electronics and pave the way toward low cost, highly reliable systems for energy intensive applications. The project and its progress will be presented. 



Speaker

Jean-Pierre Locquet

KU Leuven


Jean-Pierre Locquet obtained his PhD in Physics in 1989 from the KULeuven for his research on the structural and electrical properties of artificial metallic superlattices. In December 1988, he joined the IBM Research Laboratory Zurich as a research staff member and has since then developed several deposition techniques, tools and processes for the growth of complex oxides and their incorporation into electronic devices. Since October 2006, he is a professor at the KU Leuven, Department Physics and Astronomy and became chairman of the Leuven Nanoscience and Nanotechnology Center. Currently, he coordinates the EU H2020 projects “PHRESCO” and “GANONCMOS”. 

15:35
Analyst GaN on Silicon Market and Industry Development
Hong Lin, Yole Développement
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Finding solutions with heterogeneous integration

Analyst

Presentation

GaN on Silicon Market and Industry Development

GaN on silicon has been a promising solution since the very beginning as its potential of CMOS compatibility and reduced cost. In this presentation different markets and applications of GaN on-silicon technology, including power electronics, RF and lighting, will be presented. The competitive scenarios of incumbent technology as well as challenges and main barriers for GaN on-silicon development will be outlined. Key applications for the adoption and their impact on the supplier chain will be presented. How the player and patent landscape would change during the development of GaN on-silicon technology will also be discussed.  


Speaker

Hong Lin

Yole Développement


Dr. Hong Lin works at Yole Développement, the "More than Moore" market research and strategy consulting company, as a technology and market analyst since 2013. She is specialized in compound semiconductors and provides technical and economic analysis. Before joining Yole Développement, she worked as R&D engineer at Newstep Technologies. She was in charge of the development of cold cathodes by PECVD for visible and UV lamp applications based on nanotechnologies. She holds a Ph.D in Physics and Chemistry of materials.

15:50
Building III/V-devices on CMOS-compatible Si (001)
Wolfgang Stolz, NAsP III-V
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Finding solutions with heterogeneous integration

Presentation

Building III/V-devices on CMOS-compatible Si (001)

The challenges and the state-of-the-art of the monolithic integration of III/V-based device structures on 300mm CMOS-compatible silicon (001) wafers will be reviewed and discussed with respect to defect-free, lattice-matched GaP-on-silicon -templates. These unique GaP-on-silicon 300mm wafer templates form the ideal basis for the subsequent realization of advanced III/V-layer stacks for electronic as well as in particular for optoelectronic/laser/photonic device concepts based on the novel lattice-matched Ga(NAsP)-laser material. The monolithic integration concept of the lattice-matched III/V-stacks with standard silicon-CMOS-based micro- and nanoelectronics will be outlined.  


Speaker

Wolfgang Stolz

NAsP III-V


Wolfgang Stolz is full professor and co-head of the Structure and Technology Research Laboratory ( Material Sciences Center and Faculty of Physics, Philipps-University Marburg (Germany) ), Adjunct Professor at the Optical Sciences Center ( University of Arizona, Tucson (USA) ) and Chief Technology Officer ( NAsP III/V GmbH Marburg (Germany) ).  

His current fields of activcities include the epitaxial growth for a wide range of III/V-compound semiconductor material systems and heterostructures by applying metal organic vapour phase epitaxy (MOVPE) as well as realization of novel device concepts for electronic, solar cell and laser applications in particular also integrated on CMOS-compatible (001) Si-substrates.


16:05
III-V MOSFETs for RF- and Digital Applications
Lars-Erik Wernersson, Lund University
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Finding solutions with heterogeneous integration

Presentation

III-V MOSFETs for RF- and Digital Applications

III-V transistors are widely used for high-performance electronics while Si CMOS dominate logic and memories. The III-V performance advantage relates to the advantageous electron transport properties and the rich possibilities for heterostructure design. Si process technology allows for complex circuit design and system integration providing benefits at the system level. The potential introduction of III-V CMOS technology may open new opportunities for RF- and mixed applications, combining the strength in RF-performance with low-power logic functionality. This presentation will highlight status in this field of research with a particular focus on III-V nanowire based MOSFETs. 

Speaker

Lars-Erik Wernersson

Lund University


Lars-Erik Wernersson received the M.S degree the Ph.D. degree in Solid State Physics at Lund University in 1993 and 1998, respectively. Since 2005 he is Professor in Nanoelectronics at Lund University, following a position at University of Notre Dame 2002/2003. His main research topics include nanowire- and tunneling- based nanoelectronic devices and circuits for low-power electronics and wireless communication. He has authored/co-authored more than 200 scientific papers. He has been awarded two individual career grants and he served as Editor for IEEE Transaction on Nanotechnology. He is coordinator for the H2020 project INSIGHT

16:20
Leveraging Advanced Computer Vision, Machine Learning, and Artificial Intelligence to Find & Assign Causality to Defects
Julie Orlando, Nanotronics
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Finding solutions with heterogeneous integration

Presentation

Leveraging Advanced Computer Vision, Machine Learning, and Artificial Intelligence to Find & Assign Causality to Defects

The formidable Si substrate processes benefit from best practices being established and recognized for 30+ years. When applying advanced material epitaxy such as GaN, defects emerge that are often assigned to incorrect root cause. The process of using MOCVD reactors can result in issues like lattice mis-matches that create crystalline defects represented by edge cracks and micropits. Using advanced computer vision, machine learning, and AI the correct causality can be assigned to defects identified early in heterogeneously integrated processes affording process and design correction to occur faster and more effectively.

Speaker

Julie Orlando

Nanotronics


Julie began working for Nanotronics’ co-founders Mathew and John Putman at their previous company, Tech Pro, Inc., when she was nineteen years old and completing her undergraduate degree in Mechanical Polymer Engineering. Julie’s first published academic paper was co-authored with Matthew and John, as were her first patents. She has since gone on to publish several papers in both domestic and international journals, which she presented at material science conferences and symposia. Julie played a key role in the hardware development, sales, and customer service at Tech Pro, growing it with Matthew and John through acquisition by Duramax Marine. Julie went on to run a division of Duramax, leading projects for major industrial entities, defense contractors, and branches of the military.  Julie joined Nanotronics as employee number three. As Nanotronics grew, Julie held virtually every imaginable role from engineering to sales and field service before rising to VP of Technology and ultimately, Chief Technology Officer. Today, Julie leads our software and hardware engineering teams and plays a vital role in the ongoing service and maintenance of our customers.  


16:35
Wafer Bonding of Compound Semiconductors: Achieving Desired Interface Properties
Thomas Uhrmann, EV Group
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Finding solutions with heterogeneous integration

Presentation

Wafer Bonding of Compound Semiconductors: Achieving Desired Interface Properties

Joining different semiconductor materials can be challenging due to mismatched material properties such as different coefficients of thermal expansion or different lattice structures. Wafer bonding has proven to be a viable way to combine various materials by using interlayers like polymers or metals as well as by direct bonding. However, recent developments focus not only on the bonding of those materials and the bonding interface properties are crucial for the device performance. Nowadays it is even possible with direct bonding approaches to provide different interface properties according to the desired device design. Plasma activated bonding can be used to provide mechanical strength and reduced thermal expansion to thin layers of compound semiconductors bonded to silicon or glass. The recently introduced ComBond bonding process enables oxide-free interfaces with single nm thickness, which are electrically conductive and do not impact the crystal structure next to the bond interface. Hybrid bonding combines the benefits of direct and metal bonding and thus most efficient compact 3D stacked devices can be achieved by heterogenous device and/or our material integration.

Speaker

Thomas Uhrmann

EV Group


Dr. Thomas Uhrmann is director of business development at EV Group (EVG) where he is responsible for overseeing all aspects of EVG’s worldwide business development. Specifically, he is focused on 3D integration, MEMS, LEDs and a number of emerging markets.   Prior to this role, Uhrmann was business development manager for 3D and Advanced Packaging as well as Compound Semiconductors and Si-based Power Devices at EV Group. He holds an engineering degree in mechatronics from the University of Applied Sciences in Regensburg and a PhD in semiconductor physics from Vienna University of Technology.  


16:50
Closing Remarks by Andrew Nelson, Conference Chair
17:00
CS Industry Awards
17:30
Networking Drinks Reception and Buffet
Day 2 - Wednesday 11th April 2018
08:00
REGISTRATION - Includes Refreshments
08:50
Housekeeping by Andrew Nelson, Conference Chair
LEDs: Magnifying margins

Which sectors offer the best returns? Does the bottom line get the biggest benefit from streamlining manufacturing, or from optimising the chip?

09:00
Keynote Sunlike – Artificial Light as Good as Natural Light
Leon Baruah, Seoul Semiconductor
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LEDs: Magnifying margins

Keynote

Presentation

Sunlike – Artificial Light as Good as Natural Light

Throughout the evolution of mankind and after the discovery of fire, artificial light sources were created as an efficient way to extend our lives after sunset. However as technology progressed, through extensive research we have learned that there’s more to light than meets the eye. These discoveries have created the need for Human Centric Lighting. Seoul Semiconductor at the forefront of LED technology brings yet another innovation that would change and improve the ever changing dynamics of the modern human life.

Speaker

Leon Baruah

Seoul Semiconductor


Leon Baruah is the Field Applications Engineer for Seoul Semiconductor Europe GmbH. He has over 11 years’ experience in the semiconductor and lighting industry. During his career he has worked in applications engineering, product marketing and R&D. He has an MSc and Engineering degree from the University of Manchester. 

09:20
Analyst Revolutionising displays with MicroLEDs
Pars Mukish, Yole Développement
×

LEDs: Magnifying margins

Analyst

Presentation

Revolutionising displays with MicroLEDs

With the increasing success of OLED, and mounting interest in QLED, emissive technologies have already proven their worth and enabled a variety of consumer products with stunning display performance. But microLED could very be another disruptive display technology for a variety of applications. Since the acquisition of startup Luxvue by Apple in 2014 and that of InfiniLED by Facebook-Oculus last year, inorganic LEDs have generated a lot of attention.

Compared to existing LCD and OLED displays, microLEDs offer the promise of high brightness, dramatically reduced power consumption and improved image quality. MicroLED displays could serve the needs of and benefit most applications, spanning from wearable and mobile devices to AR/VR, TVs and even large video displays as demonstrated recently by Sony. So what’s missing? The science is here, but the success of the technology will depend on overcoming a variety of engineering and manufacturing challenges.


Speaker

Pars Mukish

Yole Développement


Pars Mukish holds a master degree in Materials Science & Polymers (ITECH - France) and a master degree in Innovation & Technology Management (EM Lyon - France). He works at Yole Développement as Senior Market and Technology Analyst in the fields of LED, OLED, Lighting Technologies and Compound Semiconductors to carry out technical, economic and marketing analysis. Since 2015, Pars Mukish has also taken on responsibility for developing LED / OLED and Sapphire activities as Business Unit Manager at Yole Développement. Previously, he has worked as Marketing Analyst and Techno-Economic Analyst for several years at the CEA (French Research Center).

09:35
Horticultural Lighting Offers Growth Opportunities
Jonathan Barton, Plessey Semiconductors
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LEDs: Magnifying margins

Presentation

Horticultural Lighting Offers Growth Opportunities

After more than a decade of trials in research and commercial greenhouses, it is now widely accepted that LED will supersede high pressure sodium as the grow lighting technology of the future. LEDs use less energy and can deliver more efficiency light spectrums to manage plant growth and boost yields in the highly controlled environments of modern horticulture – be it an industrial scale glasshouses or an urban vertical farm. The challenge is on to develop and market commercially cost effective LED grow lighting systems that deliver the promise and accelerate adoption  

Speaker

Jonathan Barton

Plessey Semiconductors


With more than 30 years’ experience in senior management roles in business development, marketing and sales, Jonathan joined Plessey in 2016 to head up development of Led Grow Lights. Since then Plessey has established a strong reputation as an innovator in the sector with emphasis on providing commercially viable LED grow lighting solutions to some of the leading growers in the European horticulture market. Jonathan holds a B.A Honours degree in Economics from Exeter University. 

09:50
The Monolithic Full-colour LED and its Applications
J.C.Chen, Ostendo Technologies
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LEDs: Magnifying margins

Presentation

The Monolithic Full-colour LED and its Applications

A full-color LED based on monolithic InGaN-based structures was demonstrated. Different wavelength lights can be obtained by simply adjusting input currents into the device. In addition to three primary colors, other colors can also be achieved by color mixing techniques. A simple growth process used in producing full-color LEDs makes it a practical technology for scalable manufacturing at low cost. This novel LED can replace three RGB LEDs used in current/future devices, such as color-temperature-control white LEDs or micro-LED displays. The manufacture complexity, therefore, can be significantly reduced. Other applications will be discussed too.

Speaker

J.C.Chen

Ostendo Technologies


Dr. Chen has been working on MOCVD research for more than 30 years. Starting as a R&D scientist at Varian Research Center in Palo Alto, CA, he worked on the growth of high-efficiency GaAs solar cells. He joined the Computer Sciences and Electrical Engineering Department, Univ. of Maryland Baltimore County (UMBC) as an Assistant Professor, later became tenured Associate Professor. During his sabbatical year, he co-founded Super Epitaxial Products Inc. The company was acquired by Kopin Corporation in 2000. In 2003, he co-founded Blue Photonics Inc. which was acquired by Ostendo Technologies Inc. and became Ostendo Epi Lab.

Dr. Chen received Ph. D. in Electrical Engineering from State Univ. of New York at Buffalo and his B.S. from Electrophysics, National Chiao-Tung Univ., Taiwan. He has more than 70 publications and 11 patents.


10:05
Improving LED Manufacturing by Full Wafer Cathodoluminescence
Samuel Sonderegger, Attolight
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LEDs: Magnifying margins

Presentation

Improving LED Manufacturing by Full Wafer Cathodoluminescence

We will give a short introduction to high resolution cathodoluminescence and highlight its capability to detect subsurface defects combined with nanometer scale mapping resolution.  We will introduce example applications where cathodoluminescence can be used to detect defects in III-V manufacturing, research & development and failure analysis. Finally, we will introduce Attolight’s brand new automated full wafer CL tool and focus on particular use cases of the tool to highlight its potential and flexibility in III-V manufacturing and R&D. 


Speaker

Samuel Sonderegger

Attolight


Samuel has headed Attolight since its creation in 2008 and helped to transform Attolight’s quantitative cathodoluminescence from manual lab and FA tools into full wafer fab ready tool.  Samuel holds an MS of Physics from EPFL and holds a PhD in physics from the same university. 


10:20
Morning Refreshment Break
5G: Where are we and what's next?

What form will 5G take? And how good will 5G be for GaAs and GaN?

11:00
Keynote Building the Industry's First 5G Front-end
Scott Vasquez, Qorvo
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5G: Where are we and what's next?

Keynote

Presentation

Building the Industry's First 5G Front-end

Carriers will be using Fixed Wireless Access (FWA) as the testbed for 5G technology to deliver a truly mobile broadband experience. And now with the release of the 3GPP 5G NR wireless standard, companies have a clearer path to support a variety of uses cases including FWA. Qorvo has selected GaN to address the FWA challenges of cost, size, weight and power demanded by operators across the world. Qorvo is leading in the development of the first Gallium Nitride 5G front-end technology for these active phased arrays.  


Speaker

Scott Vasquez

Qorvo


Scott Vasquez is a Senior Market Strategy Manager for Infrastructure and Defense Products at Qorvo Inc. Mr. Vasquez’s responsibilities include the development of market strategies to drive sustainable and profitable revenue growth within the infrastructure market, with a focus on 5G. He has championed product development using a multitude of semiconductor technologies, including, but not limited to GaAs, GaN, BAW, SAW, SOI, SiGe and CMOS. Mr. Vasquez holds a B.A. in Quantitative Economics, a B.S. in Computer Engineering and a M.S. in Electrical Engineering with a concentration in RF & Microwave Engineering, all from Tufts University.  Scott has worked in engineering, product management and business development within the semiconductor industry for the past 12 years. Prior to joining Qorvo, Mr. Vasquez has held several business and engineering positions within MACOM.  


11:20
Analyst Is 5G roll-out a certainty? And will it be good for GaAs and GaN?
Eric Higham, Strategy Analytics
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5G: Where are we and what's next?

Analyst

Presentation

Is 5G roll-out a certainty? And will it be good for GaAs and GaN?

The 5G vision is very ambitious in its scope, promising to fundamentally transform communications and create exciting new opportunities. Enabling this vision is a new era of infrastructure, devices and applications that are likely to be the next big driver for the electronics industry. The question is what part will compound semiconductors play in this growth? This presentation will review the 5G vision and some of the architectures that will enable that vision. It will also discuss the merits, challenges and trade-offs of using compound semiconductor technologies in these solutions. 

Speaker

Eric Higham

Strategy Analytics


As Director for the GaAs & Compound Semiconductor Technologies Service, Eric Higham provides analysis of the dynamics and trends for processes, technologies and components in wired and wireless communications markets. His areas of research include 3G and emerging 4G wireless networks, fiber optic networks, CATV, millimeter wave communications, broadband, military radar, EW and communications applications. Prior to joining Strategy Analytics, Eric worked in a variety of engineering, business development and marketing roles for Raytheon, Micro-Dynamics and M/A-COM. In these positions, he participated in the emergence and growth of the commercial wireless industry. Eric was most recently President and founder of Spectrum Business Development, where he developed market and product research for a variety of market applications. After over three decades in the semiconductor field, he brings a deep understanding of the technical and market trends in the GaAs and compound semiconductor sector. Eric holds an MSEE degree from Northeastern University in Boston, MA and a BSEE degree from Cornell University in Ithaca, NY.

11:35
MMICs - What is Needed to get mmWave 5G to Work?
Liam Devlin, Plextek RFI
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5G: Where are we and what's next?

Presentation

MMICs - What is Needed to get mmWave 5G to Work?

5G is intended to offer a step change in data rates with seemingly infinite capacity, and this challenge can be addressed with a move to mm-wave frequencies where large contiguous bands of spectrum can be made available. Although the mm-wave bands for 5G will not finally be agreed until 2019, much development work is already underway, and numerous demonstrator systems are being designed, assembled and trialed. This presentation will discuss the likely mm-wave 5G bands, and will compare the semiconductor technologies and packaging options that could be used to implement the required mm-wave component functionality. Real-world examples of MMICs designed for 5G demonstrator systems will be presented.  

Speaker

Liam Devlin

Plextek RFI


Liam is the CEO of Plextek RFI, a UK based design house specialising in the design and development of RFICs, MMICs and microwave/mm-wave modules. He has led the design and development of over 90 custom ICs on a range of GaAs and GaN processes at frequencies up to 90GHz. He has also developed microwave and mm-wave sub-systems using a variety of technologies. He was previously Chief Designer with Marconi Caswell and before that a Research Scientist at Philips Research Laboratories.

11:50
GaN Material Solutions for 5G
Marianne Germain, EpiGaN
×

5G: Where are we and what's next?

Presentation

GaN Material Solutions for 5G

While GaN is currently gradually replacing silicon in the RF amplifier front-end of 4G/LTE base stations, a full deployment of the next generation 5G cellular infrastructure calls for even more GaN technology. In order to enable 5G technology to keep its promises, such as of exceptionally high-speed wireless connections, ultra-low latency and enhanced mobile broadband, new GaN material solutions are needed in particular to address the higher mm-wave frequency bands targeted by 5G. We will describe innovative cost-and power-efficient GaN material solutions which are ideally suited at these high frequencies thanks to ultra-thin barrier concepts and optimized buffers for lowest RF losses. All these differentiating material features will be demonstrated in large wafer diameters, up to 150 mm for GaN-on-SiC and up to 200mm for GaN-on-silicon.  

Speaker

Marianne Germain

EpiGaN


Marianne Germain is Co-founder and Chief Executive Officer (CEO) of EpiGaN nv. She received in 1999 her PhD degree in Electrical Engineering from the University of Liege (BE), where she conducted research in close collaboration with RWTH Aachen (D), and as invited post-doc engineer in Purdue University (US) and Würzburg University (D). In 2001, she joined imec, an international microelectronic research center (Belgium), where she led the development of Gallium Nitride technology for high power/high frequency applications. Since 2004, she became Program Manager of the “Efficient Power/GaN” program. She also pursued training management course in Vlerick Management School (Gent) in 2008/2009, as well the Vlerick Entrepreneurship 2.0 program in 2016-2017. In May 2010, with her colleagues, Dr Joff Derluyn and Dr Stefan Degroote, she co-founded “EpiGaN”, a clean-tech spin-off, manufacturing GaN epiwafers for electronics applications, where she acts as CEO and member of the Board of Directors. She has authored and co-authored more than 100 international communications and co-holds several patents in the field of GaN material and devices.

12:05
Enabling GaN RF and Power Electronics through Innovative MOCVD and Wet Etch Process Technologies
Somit Joshi, Veeco
×

5G: Where are we and what's next?

Presentation

Enabling GaN RF and Power Electronics through Innovative MOCVD and Wet Etch Process Technologies

Emerging high frequency RF applications in connected devices and wireless infrastructure require improved power efficiencies at higher output power and smaller form factor at lower cost. GaN is ideally suited for these applications due to its higher power capability relative to silicon and GaAs at higher frequencies. High volume GaN devices require new innovations in MOCVD technology to deliver superior film quality, high yield, low defectivity and high uptime. 3D packaging is the most cost effective approach to integrate these RF devices with silicon CMOS modems. The use of TSVs has been implemented for stacking die to achieve vertical interconnects despite the high processing costs. These 3D concepts require a wafer thinning process to carefully remove the silicon. This talk will highlight innovative MOCVD and wet etch wafer thinning technologies to enable 5G GaN-based RF devices and reduce 3D packaging costs.

Speaker

Somit Joshi

Veeco


Somit Joshi, Veeco’s Sr. Director, MOCVD Marketing, has extensive experience in a variety of leadership roles with broad expertise in marketing, product development, product differentiation, customer support and project management. He currently directs the marketing effort for Veeco’s MOCVD business serving a variety of markets. Before Veeco, Somit gained extensive experience in creating and executing product and business strategies in the semiconductor market for KLA-Tencor in Milpitas, Ca. He completed his graduate studies from University of Central Florida and Southern Methodist University and has a Bachelor of Science in Engineering from Indian Institute of Technology in India.


12:20
High Quality Free-standing GaN Substrates
Qing Wang, Sino Nitride Semiconductor
×

5G: Where are we and what's next?

Presentation

High Quality Free-standing GaN Substrates

The bulk GaN substrate has many advantages. Its low dislocation density, high heat dissipation rate, and lack of lattice mismatch and thermal mismatch with GaN epilayers make it the ideal choice for short wavelength LEDs, blue and green laser diodes, high power electronics and microwave devices. In this study, we introduced two new technologies: substrate separation and acid wet aching. High quality 2-inch bulk GaN wafer with a dislocation density of 5-7×105 cm-2 have been obtained by HVPE. The roughness of the final wafer is 0.11nm and the total thickness variation is below 15μm. Furthermore, we have obtained 4-inch bulk GaN substrates with dislocation density below 5×106cm-2. Now we have completed the development of HVPE system for 6-inch bulk GaN substrates, and attained 6-inch GaN/ Al2O3 with our HVPE system.

Speaker

Qing Wang

Sino Nitride Semiconductor


Dr. Qing Wang is R&D manager in Sino Nitride Semiconductor Co., LTD. She primary focus on the research and development of Free-Standing GaN, GaN/ Al2O3 and GaN/Metal compound substrate. Dr. Wang holds a PhD degree from South China University of Technology and finished her Post-doctoral research in Sun Yat-Sen University. Now she is Associate Professor of Natural Science and leading several strategic GaN projects supported by Natural Science Foundation. 

12:35
Lunch Break
Ramping revenues from RF devices

What are the opportunities for III-Vs in defense and civilian markets? Will higher frequencies open up new sales?

13:45
Keynote Wireless Power with eGaN Technology
Nick Cataldo, Efficient Power Conversion
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Ramping revenues from RF devices

Keynote

Presentation

Wireless Power with eGaN Technology

The popularity of highly resonant wireless power transfer is increasing. This technology addresses consumer issues such as source-to-device distance, device orientation when being charged, simultaneous charging of multiple devices on a single source, and higher power capability – and it is safe to humans. Magnetic resonant systems use loosely coupled coils tuned to high frequencies (6.78 MHz or 13.56 MHz), far beyond the capability of MOSFETs. Also, superior characteristics of GaN devices, such as low input/output capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency. This presentation will discuss the contribution GaN makes in wireless power applications.

Speaker

Nick Cataldo

Efficient Power Conversion


Nick Cataldo has over 35 years of marketing and sales operation experience within the semiconductor industry. Prior to joining EPC, Nick was Vice President of global sales at United Silicon Carbide. He has also held senior sales and marketing leadership positions at International Rectifier and Semtech. Nick received his Bachelor of Science degree in Electrical Engineering from Polytechnic Institute of New York University. He has extensive experience in leading edge power semiconductors.

14:05
Analyst Defense Sector Trends and the Associated Market Outlook for Compound Semiconductors
Asif Anwar, Strategy Analytics
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Ramping revenues from RF devices

Analyst

Presentation

Defense Sector Trends and the Associated Market Outlook for Compound Semiconductors

While there is always uncertainty around defense budgets, the recognition that technology has a direct impact on force effectiveness will translate into continued efforts to enhance capabilities across radar, EW, communications and other military systems. Off course no one technology will be the panacea for all requirements so incumbent vacuum technologies will continue to be used. However, it is clear that architectural changes supporting a move towards requirements such as broadband performance, higher frequencies and digitization will support use cases for compound semiconductor technologies, so we expect III-V content in military electronics to increase significantly over the coming years.

Speaker

Asif Anwar

Strategy Analytics


Asif Anwar has a career that spans engineering and marketing roles in the metals, minerals and electronics industries. At Strategy Analytics, he has been providing insights and analysis in the advanced electronics markets for over 18 years, covering radar, electronic warfare, military communications as well as commercial market applications. He is the Executive Director of Strategy Analytics' Strategic Component Applications (SCA) group which delivers expertise, consulting and competitive insight on enabling semiconductor technologies. The SCA group encompasses Advanced Defense Systems (ADS), RF Component Strategies (RFCS) and the GaAs & Compound Semiconductor Technologies (GaAs) service.

Asif's current focus at Strategy Analytics is on supporting the defense industry across all the different segments, from platform and systems integrators, sub-system suppliers, software vendors and component and semiconductor technology providers. He regularly attends and speaks at external conferences and webinars on topics including global defense spending trends, military radar, satellite communications and other areas germane to the military sector, as well as being an acknowledged expert and thought leader in the compound semiconductor industry.

He graduated from the University of Teesside, UK in 1993 with a B.Eng Honours degree in Chemical Engineering, before doing Ph.D research on fatty acids.  

Asif is a member of the IEEE (including AESS, MTTS and ComSoc) as well as the IChemE.


14:20
Industrializing RF GaN/Si
Timothy Boles, MACOM
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Ramping revenues from RF devices

Presentation

Industrializing RF GaN/Si

Gallium Nitride HEMTs are the latest device/material technology with the performance capability to supplant silicon, gallium arsenide, and silicon carbide for the development and production of high power, microwave, and mmW discrete transistors and MMICs. It can easily be argued that the high volume industrialization of GaN can only be based upon the fundamental knowledge found in a mainstream silicon MOS/CMOS fab as opposed to the typical III-V foundry. Use of this technological path will produce a vastly different developmental path, more repeatable results, and lead to mainstream adoption in a much shorter time span. Indeed, for RF GaN to reach full industrialization and be able to produce comparable quantities of GaN-on-Silicon wafer output for high volume, RF markets/applications, an identical design and manufacturing methodology must be implemented. 

Speaker

Timothy Boles

MACOM


Mr. Boles holds a BA degree in physics from St. Mary’s University and a MA degree in physics from Washington University. He is the holder of 17 US patents and has authored/co-authored over 130 publications.  Mr. Boles joined MACOM in 1991 and is one of eight current Technology Fellows at MACOM Technology Solutions. He also serves as the Chairman of the Technology Fellows Committee. His current assignment is as individual contributor in Technology Development. In this role he has continued to work in the field of high frequency devices/structures to investigate the integration of new and emerging technologies to advance the overall power, frequency, and performance capabilities of microwave and mmW transistor and diode based devices and integrated circuits.  


14:35
Panel Session Panel Session
Lars-Erik Wernersson, Tamara Baksht, Andy Sellars, J.C.Chen, Thomas Uhrmann, Timothy Boles,
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Panel Session

Panel Session

The panel session will discuss topics including:

  • Challenges in scaling for high volume manufacturing
  • Opportunities and challenges in integrating photonics with electronics for true "SOC"
  • Expected trends (i.e. captive vs outsource/fabless)
  • Views on tech roadmap (i.e. - which applications and when?)

Speakers

Lars-Erik Wernersson

Lund University

Tamara Baksht

VisIC Technologies

Andy Sellars

CS Catapult

J.C.Chen

Ostendo Technologies

Thomas Uhrmann

EV Group

Timothy Boles

MACOM

15:15
Closing Remarks by Andrew Nelson, Conference Chair

Please Note: CS International reserves the right to make any necessary changes to this agenda. Every effort will be made to keep presentations and speakers as represented. However, unforeseen circumstances may result in the substitution of a presentation topic or speaker. CS International reserves the right to use photographs of any attendee for future promotions.