The presentation introduces the activities of the Center of Expertise for X-ray topography (XRT), a research collaboration between the device manufacturer Rigaku and the research institute Fraunhofer IISB, particularly regarding dislocation detection in SiC. We will show our recent achievements in the field: The first point covers the detection of threading screw dislocation (TSD) which we developed to a highly reproducible and reliable measurement. Based on this development, TSD detection by XRT has become a SEMI Standard, making this approach a common language in the industry. The same thing is currently going on for basal-plane dislocations, for which we will particularly introduce FastBPD: High-speed full wafer BPD density mapping, taking only 5 minutes for a 150mm wafer to complete.
Christian Kranert received his PhD in 2015 at Leipzig University and afterwards joined Fraunhofer IISB in 2016. There, he is working as Group Manager in the Department Materials, coping with various aspects of crystal growth from the optimization of growth processes and equipment to the characterization of the material. He is also actively involved in Fraunhofer IISB's activities in the framework of the Rigaku Center of Expertise for X-ray Topography, where he is particularly driving the defect detection in SiC.