PRESENTATION

New workflows for resolving compound semiconductor defectivity issues using destructive and non-destructive electron microscopy techniques

For RF and power devices, the adoption of compound semiconductors, such as SiC and GaN, is attractive for their ability to operate at higher voltages, currents and frequencies. However, wafer fabrication of compound semiconductor devices can pose unique challenges impacting yield and manufacturing costs. One of these challenges is crystalline defects that can be difficult to localize and characterize. In this presentation, we’ll discuss crystalline defects and Electron Channeling Contrast Imaging (ECCI), a non-destructive SEM imaging method forsuccessfully localizing and characterizing the crystallographic properties of defects. This technique paired with an electrical fault analysis, TEM sample prep, and TEM analysis workflow bridges the gap between localizing the defects, performing root cause analysis and obtaining the answers to inform and improve manufacturing processes.