Wide band gap semiconductors such as Gallium Nitride (GaN) and Silicon Carbide (SiC) are rapidly being adopted in consumer electronics, Electric Vehicles and other industrial applications. These materials not only offer performance benefits but also cost advantages. In this talk, the cost comparison between Si, GaN and SiC devices we be discussed and propositions for further cost savings in the utilization of these materials will be highlighted.
Oluwasayo Loto, PhD., is a Technology and Cost Analyst at Yole SystemPlus, part of Yole Group. Oluwasayo work focuses on Power Semiconductor device technologies. With a solid expertise in the process development and electrical characterization of diamond power transistors, Oluwasayo's mission is to develop reverse costing reports on innovative Si based and GaN based power devices and other emerging technologies. Prior to Yole SystemPlus, Oluwasayo worked as an R&D engineer with CEA and CNRS on the development of semiconductor detectors and power device applications respectively. He has made significant contribution to yield improvement of diamond device fabrication. Oluwasayo holds a Phd in Nanoelectronics and Nanotechnologies from the University Grenoble Alpes (France) and a double masters degree in materials science and engineering from TU Darmstadt (Germany) and Grenoble INP Phelma (France).