GaN is used in power devices due to high breakthrough strength, fast switching speed, and high thermal conductivity. Production monitoring is key. Buffer layer quality is critical to growing high quality devices, affecting breakdown voltage, device lifetime, operating frequency, etc. Device layer thickness and composition are critical to electrical properties. Bruker’s R&D and production-dedicated systems are designed to monitor the quality of the substrate and epilayers with high productivity and fast feedback. Using non-destructive techniques such as HRXRD, XRR and XRDI on wafers up to 300mm, the substrate and epilayer quality, composition and thickness as well as crystalline defects can be monitored with high repeatability, high resolution, high throughput, full automation, and easy-to-use software.
John Mallows is an Application Scientist in the Bruker semiconductor X-ray business unit. He is responsible for demo measurements, applications support, and customer support across a range of X-ray metrology products. John Mallows has a PhD in materials chemistry from the University of Edinburgh. With over 10 years’ experience in semiconductor materials, he has been engaged in research and development of crystal growth, device fabrication and materials characterisation.