Allowing for photonic and electronic performance on the same chip, integrated photonic–electronic circuits are a future of communication, sensing, and other photonic/electronic fields. Through the heterogeneous integration of III-V epitaxial device material onto silicon, one may fabricate integrated devices. Presented herein is a wafer-scale, CMOS-compatible process of combining III-V and silicon material whereafter the integrated GaAs-based VCSELs are fabricated. These lasers show promising performances including a reduced wavelength shift at increasing currents due to an improved thermal pathway for these photonic devices. The electrical and optical performance of these heterogeneous, epitaxial–transfer integrated GaAs VCSELs on silicon are compared to as-grown counterparts.
Leah Espenhahn works with Dr. John Dallesasse at the University of Illinois at Urbana-Champaign (UIUC) on creating heterogeneously integrated III-V photonic devices on silicon via epitaxial transfer. She graduated Summa Cum Laude with a B.S. in Electrical Engineering from North Carolina State University in 2020, then joined Dr. Dallesasse’s group at UIUC where she has since been working on her PhD. She has recently presented her research at SPIE Photonics West in 2022.