PRESENTATION

Building VCSELs on silicon

Allowing for photonic and electronic performance on the same chip, integrated photonic–electronic circuits are a future of communication, sensing, and other photonic/electronic fields. Through the heterogeneous integration of III-V epitaxial device material onto silicon, one may fabricate integrated devices. Presented herein is a wafer-scale, CMOS-compatible process of combining III-V and silicon material whereafter the integrated GaAs-based VCSELs are fabricated. These lasers show promising performances including a reduced wavelength shift at increasing currents due to an improved thermal pathway for these photonic devices. The electrical and optical performance of these heterogeneous, epitaxial–transfer integrated GaAs VCSELs on silicon are compared to as-grown counterparts.