PRESENTATION

Ge substrates for photonics applications – MOCVD growth, cost advantages of Ge recycling and new device possibilities

This presentation will focus on the technical advantages of using Germanium (Ge) over GaAs in the production of photonic devices such as micro-LEDs and long-wavelength VCSELs. The presentation will explain the nuances of epitaxial growth on Ge substrates such as auto-doping effects and anti-phase domains and how to avoid them, the development of n-contacts to the back of Ge wafers, and the benefits of Ge substrate recycling. It will also discuss the potential for collaboration between III-V companies and Silicon semiconductor/CMOS players to improve form-factor and device performance while reducing production costs. Umicore is working on 8’’ and 12’’ Ge substrates, which can serve as a bridge between the III-V world and the Silicon semiconductor industry due to their compatibility with CMOS specs. The presentation will present work on CMOS-compatible Ge wafer development.