PRESENTATION

High Volume Manufacturing engineered GaN material solutions for high-efficiency RF & Power devices

At the core of the RF GaN device performance, the epi III-Nitrides material wafers set the specifications, the energy-efficiency and ultimately the performance of the GaN devices. Likewise GaN-on-SiC is providing alternative solutions to LDMOS devices in RF Power amplifier infrastructure, we expect expansion of GaN RF devices in other markets, such small cells, FWA and, later, handsets, thanks to cost efficient-use of Si substrates in larger wafer diameters, and CMOS compatible solutions.

Marianne Germain

Soitec

Dr Marianne Germain is General Manager Business Unit GaN, SOITEC. She received in 1999 her PhD degree in Electrical Engineering from the University of Liege (BE), where she conducted research in close collaboration with RWTH Aachen (D), and as invited post-doc in Purdue University (US) and Würzburg University (D). In 2001, she joined imec, where she became in 2004 Program Manager of the “Efficient Power/GaN” program. In May 2010, she co-founded “EpiGaN”, a spin-off located in Hasselt manufacturing GaN epiwafers for electronics applications, where she acted as CEO and member of the Board of Directors. EpiGaN nv was acquired by SOITEC in May 2019, where she is now acting as General Manager of the Business Unit GaN.