PRESENTATION

Capability Advancement of Production MBE for Next Generation Compound Semiconductors

Recent advancements in production scale Molecular Beam Epitaxy (MBE) capabilities are being driven by the needs for increasing both the capacity and the level of integration for the manufacturing of the next generation compound semiconductor devices. Riber (MBE equipment manufacturer) and IntelliEPI (epi foundry) is jointly developing a high volume (8x6”/4x200mm) MBE reactor to address manufacturing scalability while maintaining the precision interface control advantage offered by MBE. Integration for multiple process steps onto a single UHV platform to increase the final device performance is another major industry trend. Value added processing capabilities include in-situ metallization, hybrid growth/re-growth and in-situ cleaning. Select device applications such as InP-HBTs, p-HEMTs, VCSELs, dilute nitride QW & GaN ohmic contact re-growth will be discussed.

Paul Pinsukanjana

Intelligent Epitaxy Technology, Inc. (on behalf of Riber)

Paul Pinsukanjana is the VP of Technology and a co-founder of IntelliEPI, a merchant epi material supplier. Through his various positions, Dr. Pinsukanjana has developed extensive expertise in MBE growth and electronic/optoelectronic devices. He also served as the Principal Investigator under various US government programs. This includes NVESD-VISTA Program to develop Sb-based Type-II Strained Layer Superlattice (SLS) for IR FPA applications. At JPL, he served as Member of Engineering Staff working on optoelectronics and sub-millimeter wave devices. At Applied EPI (now part of Veeco), Paul served as the In-situ Technology Director to implement real-time sensor monitoring technologies for multi-wafer production MBE. Dr. Pinsukanjana received his Ph.D. in Physics from UC Santa Barbara in 1994, and BA in Physics and Mathematics from UC Berkeley in 1988.