PRESENTATION
Plasma-Polish Dry Etch: Smoothing solution to prepare Epi-Ready SiC for Power Applications
Silicon Carbide (4H-SiC) is an ideal wide bandgap semiconductor for high-voltage (>1.2kV) power applications, because of its unique material properties. However, with these unique properties come processing challenges, with development required to maintain high yield, and high substrate costs which contribute significantly to device costs. Oxford Instruments has developed and launched their Plasma Polish process, a contactless and scalable smoothing process on their existing PlasmaPro 100 etch platform, to prepare SiC wafers for epi, which addresses yield and cost challenges in SiC device production. During the talk, Amandev will share their progress on the productization of this contactless SiC smoothing process
Amandev Singh
Oxford Instruments
Amandev Singh supports Oxford Instruments Plasma Technology as SiC Program Product Manager, to leverage their extensive expertise in Compound Semiconductors to bring valuable solutions to semiconductor fab operators. Trained as a Physicist and Business Economist, he has over 10 years experience in the semiconductor industry supporting fab operations in leading edge Silicon chip manufacturing. He is a well-rounded semiconductor professional with experience ranging from product development to commercialization as well as corporate strategy within the chip manufacturing ecosystem.