PRESENTATION

Tight process control for GaN-based power devices: The Potential of connected metrology in semiconductor device production

With GaN-based power devices rapidly emerging into many applications, questions of throughput, yield and tight control of the ever-increasing specifications become an important topic in semiconductor device production. Especially the first steps in the value chain are both complex and crucial for the quality and yield of the final devices: Deviations during epitaxial growth in MOCVD or the following plasma etch steps can never be compensated in the subsequent downstream processes. Therefore, a lot of effort is spent on in-situ control of both epitaxy and plasma etching. In this presentation, we will show, that the accuracy and precision of the in-situ control can be substantially increased, when the metrology is connected across the different processes and measurement results of the preceding process are used in the analysis of the successive process.