Gallium oxide is expected to be a next-generation power semiconductor material because it has a large bandgap and can be industrially produced in high-quality large crystals. In the presentation, bulk crystal growth technology and epitaxial growth technology will be introduced, and the current quality of epitaxial wafers will be reported. In addition, as the latest status of gallium oxide power device development, I will talk about the performance improvement of Schottky barrier diodes and field effect transistors.
Akito Kuramata received the B.E degrees from Kyoto University, Kyoto, Japan, in 1986. He joined Fujitsu Laboratories Ltd., Atsugi, Japan, in 1986 and became a manager in 1999. He moved to Eudyna Devices Inc., Yokohama, Japan, in 2005, as a manager. He moved to Tamura Corporation, Sayama, Japan, in 2008 as a senior manager and a senior specialist. He established Novel Crystal Technology, Inc. in 2015 and became a CEO. He has been engaged in research and development of crystal growth and device process for compound semiconductor devices such as laser diodes, optical detectors, diodes, transistors and so on.