PRESENTATION

Gallium Oxide – The next revolution in power electronics

Gallium Oxide, with its bandgap as high as 4.8eV, has attracted great attention for power electronics with voltage ranges as high as 10kV, for applications from transportation to power transmission. The ability of grow substrates from the melt, in contrast to e.g. SiC, also offers the potential for low cost devices. Since the demonstration of first devices using this new material in 2012, major progress has been made, with devices already reaching in excess of 2.5kV blocking voltages. Challenges though remain related to the materials’ low thermal conductivity and the lack of good p-type doping. Recent progress in device performance as well as in overcoming its challenges will be discussed.

Martin Kuball

Bristol University

Professor Kuball is Royal Academy of Engineering Chair in Emerging Technologies at the University of Bristol, UK; he is Director of the Centre for Device Thermography and Reliability (CDTR), Fellow or IEEE, IET, MRS, SPIE and IoP. He obtained his PhD from the Max-Planck Institute for Solid State Physics in Stuttgart, Germany and joined the University of Bristol after being Feodor Lynen Postdoctoral Fellow at Brown University, USA