Ghassan received the chemical engineering degree from the university of Applied Science, Berlin, Germany in 2001. In 2022 he took over the position of sales director at ELEMENT 3-5 GmbH with a special focus on the product management for the ACCELERATOR 3500K. Prior to this, he worked as an independent consultant in the semiconductor industry. Before that, he joined Ebner Group in 2011 and held several roles within the sapphire department (FAMETEC) In 2018, he built up within the group the SiC crystal growth division, which is a spin-off company since 2020. Before that, he worked at AIXTRON in R&D for development of high-k and metal gate for CMOS applications by CVD/PECVD. Ghassan holds over 15 patents in crystal growth of Sapphire and SiC.
ELEMENT 3—5 developed a new state of the art mass production epitaxy system, the ACCELERATOR 3500K. I want to present the novel technology that enables LEDs, mini-, micro-LEDs or HEMT manufacturer to have a completely new option: single crystal layer qualities and increased layer homogeneity paired with significantly reduced production costs. The epitaxy system offers a ten times bigger capacity compared to a MOCVD reactor. In comparison to the MOCVD process the incorporation efficiency of the molecules is distinctly higher (from 35% to > 80%), which leads to significantly reduced consumable costs. In addition, toxic gases are avoided completely. All in all an advantageous solution for the user to enter new markets like microLEDs for displays or in mature markets like the classical LED and HEMT.