Denis Marcon received a M.S. degree from the University of Padova in 2006. In 2011, he received the degree of Doctor in Engineering (Ph. D.) from the Catholic University of Leuven and Imec with a thesis entitled “Reliability study of power gallium nitride based transistors”. Denis is leading author or co-author of more than 50 journal papers or international conference contributions.
After his Ph.D. graduation, Denis has been leading projects aiming to develop GaN HEMTs for several applications (RF and power switching). Thereafter, he joined the business development team of Imec where he was directly responsible for the partnerships with Imec in the field of GaN power electronics as well as on dedicated development and manufacturing of Si-based devices, MEMS, sensors and micro-systems.
Denis is General Manager of Innoscience Europe (a subsidiary of Innoscience), and he is directly responsible for the Innoscience’s GaN business and marketing in Europe and the United States.
In this presentation, we will show that to truly innovate at the transistor level and to mass manufacture cost-competitive GaN power devices there is the need of a truly integrated device manufacturer with high volume 8-inch internal manufacturing fully focused on GaN technology. We will present the latest HV (650V) and LV (30V-150V) portfolio of discrete GaN power devices that are available in standard packaging technology, so that Silicon users can easily switch from Silicon to GaN technology. While some engineers prefer to use GaN power discrete devices for flexibility, some others prefer to use an integrated solution (e.g. GaN power transistors + driver or half-bridge+driver) in order to ease their system design. For this reason, we will present our newly-introduced SolidGaNTM product offering of integrated GaN power device. We will conclude the presentation by showing how to take advantage of discrete (InnoGaN™) or integrated (SolidGaNTM) Innoscience’s GaN power devices in enhancing the performance of power converters.