Sebastian Krause joined Fraunhofer Institute for Applied Solid State Physics IAF in 2015. He is involved in the GaN technology development and device design for frequencies up to > 200 GHz. In particular, he is responsible for the conception and development of IAF’s 100-V GaN technology.
Sebastian received his M.Sc. degree in “Micro and Nanoelectronics” from Karlsruhe Institute of Technology in 2015.