Building better gallium oxide devices via HVPE

The beta-phase of the ultrawide bandgap semiconductor gallium oxide continues to garner widespread interest thanks to its wide bandgap (4.8eV), high breakdown strength (8MV/cm), and the relatively high quality and large area availability of substrates, thanks to its ability to be grown from the melt. To date, hydride vapor phase epitaxy (HVPE) has been the dominant epigrowth technique utilized for demonstrations of vertical power diodes and transistors in b-Ga2O3 due to the high chemical purity and rapid growth rates associated with the technique. In this talk, Kyma will outline its recent progress on thick HVPE grown layers for high power device applications. High quality films, grown at high growth rates over large areas will be presented, with an eye toward the manufacturability of producing such films using Kyma's proprietary high throughput Ga2O3 HVPE reactor.